features low cost diffus ed junction low leakage low forward voltage drop high current capability and s im ilar s olvents mechanical data cas e:jedec do-27,m olded plas tic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight:0.041 ounces ,1.15 gram s mounting pos ition: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm v max imum rms v oltage v r m s v maximum dc blocking voltage v dc v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 5 . 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 3. thermal resistance f rom junction to ambient. by 328 d o - 2 7 easily cleaned with freon,alcohol,isopropanol a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 5 5 -- - - + 1 5 0 -55---- +150 500 5 . 0 1 5 0 i r 22 a 40 voltage range: 1500 v curr e n t : 5.0 a 5.0 a fast recovery rect ifier i f(av) the plastic material carries u/l recognition 94v-0 i fsm 1.45 60 by 3 28 1500 1050 1500 dimensions in millimeters www.diode.kr diode semiconductor korea
1 2 4 108 20 40 60 80 100 0 t j =125 8.3ms single half sine-wave 15 30 45 60 0.8 1.0 1.2 1.4 1 . 6 1 . 8 0 . 01 0 . 02 0 . 06 0 . 04 0 . 1 0 . 2 0 . 4 1 . 0 2 4 10 100 t j =25 pulse width=300us 1 . 0 10 1 .1 .2 4 2 6 20 40 60 200 100 20 2 10 10040 t j =25 f=1mhz 4 .4 1.0 2.0 3.0 4.0 5.0 25 50 1 2 5 1 7 5 single phase half wave 60h z resistive or inductive load 0 2 0 0 75 1 5 0 1 0 0 6.0 -1.0a -0.25a 0 +0.5a t rr 1cm pulse generator (note2) d.u.t. 1 n.1. 50 n.1. oscilloscope (note 1) (+) 50vdc (approx) (-) 10 n.1. (-) (+) amperes amperes junction capacitance,pf peak forward surge current amperes by 328 s e t t i m e b a s e f o r 200 n s / c m instantaneous forward voltage,volts ambient temperature, notes:1.rise time =7ns max. input impedance=1m .22pf fi g. 1 -- reverse recovery ti me characteri sti c and test ci rcui t di agram average forward rectified current fig.4--typical junction capacitance fi g. 5--peak forward surge current 2.rise time=10ns max. source impedance=5o instantaneous forward current fi g. 3 -- forward derati ng curve fi g. 2 --typi cal forward characteri sti c reverse voltage,volts number of cycles at 60 hz www.diode.kr diode semiconductor korea
|
